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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3324 PACKAGE TO-3P
FEATURES
* Low gate charge : QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) * Gate voltage rating : 30 V * Low on-state resistance : RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 3.0 A) * Avalanche capability ratings (TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg
Note2 Note2
900 30 6 18 120 3.0 -55 to + 150 6.0 21.6
V V A A W W C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Storage Temperature Single Avalanche Current Single Avalanche Energy
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14203EJ2V0DS00 (2nd edition) Date Published January 2000 NS CP(K) Printed in Japan
The mark * shows major revised points.
(c)
1999
2SK3324
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Leakage Current Gate to Source Leakage Current Gate to Source Cut-off Voltage SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 2.5 2.5 3.3 2.5 1000 200 42 17 38 57 33 32 5 20 0.9 1.9 9.0 2.8 MIN. TYP. MAX. 100 100 3.5 UNIT TEST CONDITIONS VDS = 900 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1.0 mA VDS = 20 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 150 V, ID = 3.0 A, VGS(on) = 10 V, RG = 10 , RL = 10 VDD = 450 V, VGS = 10 V, ID = 6.0 A IF = 6.0 A, VGS = 0 V IF = 6.0 A, VGS = 0 V, di/dt = 50 A/s
A
nA V S pF pF pF ns ns ns ns nC nC nC V
* *
Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
s C
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
0
10 %
VGS(on)
90 %
IAS ID VDD
ID ID
Wave Form
0 10 %
10 %
= 1 s Duty Cycle 1 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14203EJ2V0DS00
2SK3324
TYPICAL CHARACTERISTICS (TA = 25 C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
100 80 60 40 20
120 100 80 60 40 20 0 20 40 60 80 100 120 140 160
0
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 10 8
=1 00 s
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
o S( n)
Lim
ite
d
ID - Drain Current - A
ID(pulse) P W
1m
6 VGS = 10 V 4
RD
Po we r
s
10
1
Di
m
ss
s
ip
at
io
n
Li
m
ite
2
d
0.1 1
TC = 25C Single Pulse 10 100
1000
0
4
8
12
16
20
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS 100 TA = 125C 75C 25C -25C
ID - Drain Current - A
10
1
0.1 0.01 0 Pulsed 5 10 15
VGS - Gate to Source Voltage - V
Data Sheet D14203EJ2V0DS00
3
2SK3324
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A)= 41.7 C
10 Rth(ch-C)= 1.04 C 1
0.1
0.01 0.001 0.0001 TC = 25C Single Pulse 0.001 0.01 0.1 1 10 100 1000
PW - Pulse Width - s
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 8 Pulsed
| yfs | - Forward Transfer Admittance - S
100
RDS(on) - Drain to Source On-state Resistance -
6
10
TA = -25C 25C 75C 125C
4 ID = 6.0 A 2 3.0 A
1
0.1 0.01
VDS = 20 V Pulsed 0.1 1.0 10
0
4
8
12
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
Pulsed VGS = 10 V
5 VDS = 10 V ID = 1.0 mA 4
6
3 2 1
4
2
0 0.01
0.1
1
10
100
0 -50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14203EJ2V0DS00
2SK3324
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 6 5 4 3 2 1 0 -50 VGS = 10 V ID = 3.0 A 0 50 100 150 100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
10
1
VGS = 10 V 0V
0.1 0 0.5 1 1.5 VSD - Source to Drain Voltage - V
Tch - Channel Temperature - C
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
Ciss, Coss, Crss - Capacitance - pF
td(on), tr, td(off), tf - Switching Time - ns
VGS = 0 V f = 1 MHz Ciss
tr 100 tf td(off) td(on) 10
1000
100
Coss
Crss 10 0.1 1 10 100
1 0.1
VDD = 150 V VGS = 10 V RG = 10
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 10000
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
di/dt = 50 A / s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 6.0 A 12 VDD = 450 V 300 V 150 V
1000
8
100
4
10 0.1
1
10
100
0
10
20
30
40
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D14203EJ2V0DS00
5
2SK3324
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100.0 100
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 150 V RG = 25 VGS = 20 V 0 V IAS 6.0 A
IAS - Single Avalanche Energy - A
Energy Derating Factor - %
1.00E-01
80
10.0
IAS = 6.0 A
60
EAS
=2
1.6
mJ
40
1.0 VDD = 150 V VGS = 20 V 0 V 0.1 RG = 25 1.00E-04 1.00E-03
20
1.00E-02
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14203EJ2V0DS00
2SK3324
PACKAGE DRAWING (Unit : mm)
TO-3P (MP-88) EQUIVALENT CIRCUIT
Drain
4.7 MAX.
1.0 TYP. 4.50.2
3.20.2 15.7 MAX.
1.5 TYP.
4
20.5 MAX. 5.0 TYP.
1
2
3
18.70.4
7.0 TYP.
Gate
Body Diode
Source
19 MIN.
3.4 MAX.
2.20.2
1.00.2
0.60.1
2.80.1
5.45 TYP.
5.45 TYP.
1: Gate 2: Drain 3: Source 4: Fin (Drain)
Remark
Strong electric field, when exposed to this device, cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Data Sheet D14203EJ2V0DS00
7
2SK3324
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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